Donor and acceptor impurity states in N-polar wurtzite InGaN staggered quantum wells: Built-in electric field effects

摘要

Based on the effective-mass approximation, the hydrogenic donor and acceptor impurity states are investigated theoretically in the N-polar wurtzite (WZ) InGaN staggered quantum wells (QWs). Numerical results show that the built-in electric field, the stepped barrier height and well size influences are obvious on impurity states in the staggered QWs. Moreover, the stepped barrier height can tune effectively acceptor impurity states, while it is insensitive to donor impurity states in the staggered QWs. In particular, the calculated results indicate that the built-in electric field can induce the donor and acceptor binding energies of impurities located at Z_i=L_w and - L_w become insensitive to the variation of the well width, respectively.