Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

摘要

Within the framework of the effective-mass approximation and variational approach, we present calculations of the bound exciton binding energy, due to an ionized donor, in wurtzite In_xGa_(1-x)N/GaN strained quantum dots (QDs), considering three-dimensional confinement of the electron and hole in the QDs and the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Our results show that the position of the ionized donor, the strong built-in electric field, and the structural parameters of the QDs have a strong influence on the donor binding energy. The variation of this energy versus position of the donor ion is in double figures of milli-electron volt. Realistic cases, including the donor in the QD and in the surrounding barriers, are considered.