Preparations of magnetoelectric thin films for superconducting devices

摘要

Representative magnetoelectric (ME) Cr2O3 thin films were grown on R-cut sapphire and SrTiO3(100) substrate in order to integrate with high temperature superconductor oxides. The replacement of a base current and stabilization of I-C spread for single flux quantum device is expected. Highly oriented Cr2O3 thin film grew on sapphire at 550 degrees C by off-axis DC-RF hybrid magnetron sputtering method with two-in. Cr metal target. The surface was composed of coalesced rectangular grains, the surface roughness R-a of which was 1.9 nm. Estimated induced magnetic field with electric field applied of 0.24 MV/cm was 1.0 G around 40 K. (C) 2007 Elsevier B.V. All rights reserved.