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MOCVD OF HIGH QUALITY YBA2CU3O7-DELTA THIN FILMS USING A FLUORINATED BARIUM PRECURSOR

机译:氟化钡前驱体对高质量YBA2CU3O7-δ薄膜的化学气相沉积

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MOCVD of superconducting YBa2Cu3O7-delta thin films using the novel fluorinated barium beta-diketonate complex [Ba(TDFND)(2) . tetraglyme](1) in combination with [Y(TMHD)(3)](2) and [Cu(TMHD)(2)] is reported. The Ba complex has a low melting point (72 degrees C), is thermally stable to 200 degrees C and allows reproducible and reliable film deposition even when maintained at 145 degrees C for several weeks, Conversion of the fluoride to the oxide is achieved by in situ hydrolysis. Films deposited on SrTiO3 (100) were characterised by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, rocking curve, ac susceptibility and secondary ion mass spectrometry. Homogeneous layers of YBa2Cu3O7-delta, similar to 0.25 mu m thick, were grown at similar to 0.13 mu m h(-1). The films are epitaxial with good c axis orientatior. Critical temperatures T-c are typically 91 K and critical current densities J(c) (at 77 K) of similar to 5 MA cm(-2) are reported, SIMS results showing levels of residual fluorine do not exceed 250 ppm. [References: 22]
机译:使用新型氟化β-二酮基钡络合物[Ba(TDFND)(2)进行MOCVD超导YBa2Cu3O7-δ薄膜。报道了与[Y(TMHD)(3)](2)和[Cu(TMHD)(2)]结合使用的四甘醇二甲醚](1)。 Ba络合物的熔点低(72摄氏度),在200摄氏度下具有热稳定性,即使在145摄氏度下保持数周也可以重现和可靠地沉积薄膜。原位水解。沉积在SrTiO3(100)上的薄膜通过扫描电子显微镜,能量色散X射线光谱,X射线衍射,摇摆曲线,交流磁化率和二次离子质谱进行了表征。 YBa2Cu3O7-δ的均质层(类似于0.25μm的厚度)以类似于0.13μmh(-1)的速度生长。这些膜是外延的,具有良好的c轴取向。临界温度T-c通常为91 K,据报道临界电流密度J(c)(在77 K时)接近5 MA cm(-2),SIMS结果显示残留氟含量不超过250 ppm。 [参考:22]

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