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首页> 外文期刊>Physica, C. Superconductivity and its applications >Stoichiometry control of magnetron sputtered Bi2Sr2Ca1-xYxCu2Oy (0 <= x <= 0.5) thin film, composition spread libraries: Substrate bias and gas density factors
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Stoichiometry control of magnetron sputtered Bi2Sr2Ca1-xYxCu2Oy (0 <= x <= 0.5) thin film, composition spread libraries: Substrate bias and gas density factors

机译:磁控溅射Bi2Sr2Ca1-xYxCu2Oy(0 <= x <= 0.5)薄膜的化学计量控制,成分扩散库:衬底偏压和气体密度因子

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A magnetron sputtering method for the production of thin-film libraries with a spatially varying composition, x, in Bi2Sr2Ca1-xYxCu2Oy (0 <= x <= 0.5) has been developed. Two targets with a composition of Bi2Sr2Cu2O8.5+delta and Bi2Sr2CaCu2O8+delta are co-sputtered with appropriate masks. The target masks produce a linear variation in opposite, but co-linear radial direction, and the rotation speed of the substrate table is sufficient to intimately mix the atoms. EDS/WDS composition studies of the films show a depletion of Sr and Bi that is due to oxygen anion resputtering. The depletion is most pronounced at the centre of the film (i.e. on-axis with the target) and falls off symmetrically to either side of the 75 mm substrate. At either edge of the film the stoichiometry matches the desired ratios. Using a 12 mTorr process gas of argon and oxygen in a 2:1 ratio, the strontium depletion is corrected. The bismuth depletion is eliminated by employing a rotating carbon brush apparatus which supplies a -20 V DC bias to the sample substrate. The negative substrate bias has been used successfully with an increased chamber pressure to eliminate the resputtering effect across the film. The result is a thin film composition spread library with the desired stoichiometry. (c) 2005 Elsevier B.V. All rights reserved.
机译:已经开发出一种磁控溅射方法,用于在Bi2Sr2Ca1-xYxCu2Oy(0 <= x <= 0.5)中生产具有空间变化的成分x的薄膜库。用适当的掩模共同溅射由Bi2Sr2Cu2O8.5 +δ和Bi2Sr2CaCu2O8 +δ组成的两个靶。目标掩模在相反但共线的径向方向上产生线性变化,并且衬底台的旋转速度足以紧密混合原子。薄膜的EDS / WDS组成研究表明,Sr和Bi的耗尽是由于氧阴离子的溅射所致。耗尽在膜的中心(即与靶同轴)最明显,并且相对于75mm基板的任一侧对称地脱落。在膜的任一边缘,化学计量比均符合所需比率。使用比例为2:1的12 mTorr氩气和氧气的工艺气体,可以校正锶的消耗。通过使用旋转碳刷设备可以消除铋的消耗,该设备将-20 V DC偏压提供给样品基板。负衬底偏压已成功用于增加腔室压力,从而消除了整个膜的再溅射效应。结果是具有所需化学计量的薄膜组合物扩散文库。 (c)2005 Elsevier B.V.保留所有权利。

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