Photoluminescence from two-dimensional electron gas in AlGaAs/GaAs heterojunctions under high electric fields

摘要

Photoluminescence from the 2DEG in AlGaAs/GaAs heterojunctions has been investigated under high electric fields and reverse gate voltage. Under the reverse gate voltage, PL intensities of the (D~0,X) line, and HB1 and HB2 emissions are considerably suppressed due to controlled decrease of the Fermi level. Real space transfer of the 2DEG from the heterojunction to the AlGaAs layer, and the enhancement of the PL intensities under the magnetic field have been argued.