Ultrafast carrier-carrier scattering in Al_xGa_(1-x)As/GaAs quantum wells

摘要

We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al_(0.32)Ga_(0.68)As/GaAs quantum wells. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 10~(11) cm~(-2).