Far-infrared emission and possibility of population inversion of hot holes in MQW InGaAs/GaAs heterostructures under real space transfer

摘要

Hot holes in strained MQW InxGa1-xAs/GaAs heterostructures excited at lateral charge transport are probed by far-infrared emission and band gap photoluminescence. Highly nonequilibrium phenomena discovered are shown to result from the real space transfer. New mechanism for the population inversion between continuum and shallow bound states in quantum wells in high lateral electric fields is put forward. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 8]