PHOTOLUMINESCENCE FROM INGAAS/GAAS MQW HETEROSTRUCTURES UNDER REAL SPACE TRANSFER

Revin DG.; Andronov AA.; Gaponova DM.; Gavrilenko VI. Malkina IG.; Uskova EA.; Zvonkov BN.; Aleshkin VY.

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PHOTOLUMINESCENCE FROM INGAAS/GAAS MQW HETEROSTRUCTURES UNDER REAL SPACE TRANSFER

机译：实际空间传输下来自INGAAS / GAAS MQW异质结构的光致发光

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Lateral electric field (up to 2 kV/cm) effects on the band gap photoluminescence from selectively doped p-type MQW InxGa1-x As/GaAs heterostructures under red space transfer have been studied. Peculiarities of the photoluminescence spectra associated with hole heating and escape from quantum wells to barriers have been observed. [References: 2]

机译：研究了在红色空间转移下，横向电场（高达2 kV / cm）对选择性掺杂的p型MQW InxGa1-x As / GaAs异质结构对带隙光致发光的影响。已经观察到与空穴加热和从量子阱逃逸到势垒有关的光致发光光谱的特殊性。 [参考：2]

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《Physica status solidi, B. Basic research》 |1997年第1期|共3页
作者
Revin DG.; Andronov AA.; Gaponova DM.; Gavrilenko VI. Malkina IG.; Uskova EA.; Zvonkov BN.; Aleshkin VY.;
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正文语种 eng
中图分类固体物理学;
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Transport;

机译：运输;

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1. PHOTOLUMINESCENCE FROM INGAAS/GAAS MQW HETEROSTRUCTURES UNDER REAL SPACE TRANSFER [J] . Revin DG., Andronov AA., Gaponova DM., Physica status solidi, B. Basic research . 1997,第1期

机译：实际空间传输下来自INGAAS / GAAS MQW异质结构的光致发光
2. IR RADIATION FROM HOT HOLES IN MQW INGAAS/GAAS HETEROSTRUCTURES UNDER REAL SPACE TRANSFER [J] . Aleshkin VY., Antonov AV., Bekin NA., Physica status solidi, B. Basic research . 1997,第1期

机译：真实空间传输下MQW INGAAS / GAAS异质结构中热孔的红外辐射
3. Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure [J] . C. L Wu, W. C. Hsu, M. S. Tsai, Applied Physics Letters . 1995,第6期

机译：使用多个δ掺杂GaAs / InGaAs拟晶异质结构的超强负差分电阻实空间传输晶体管
4. INFRARED EMISSION OF HOT HOLES IN STRAINED MULTI-QUANTUM-WELL HETEROSTRUCTURES InGaAs/GaAs UNDER REAL SPACE TRANSFER [C] . NATO advanced study institute on advanced electric technologies and systems based on low-dimensional quantum devices . 1997

机译：真实空间转移下应变多量子井异质结构IngaAs / GaAs中的热孔红外发射
5. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors [D] . Zhu, Yan. 2014

机译：低功率隧道场效应晶体管的混合As / Sb和拉伸应变的Ge / InGaAs异质结构
6. Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots [O] . Qing Yuan, Baolai Liang, Chuan Zhou, 2018

机译：温度和激发强度对InGaAs / GaAs表面量子点光致发光特性的相互作用
7. Light-emitting logic devices based on real space transfer in complementary InGaAs/InAlAs heterostructures [O] . Vickers J. A, K. B. Balkan, M. Mastrapasqua, 1993

机译：基于互补InGaas / Inalas异质结构中的实空间转移的发光逻辑器件

PHOTOLUMINESCENCE FROM INGAAS/GAAS MQW HETEROSTRUCTURES UNDER REAL SPACE TRANSFER

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