...
首页> 外文期刊>Physica, B. Condensed Matter >Exact solution of an impurity semiconductor model by Hamiltonian renormalization
【24h】

Exact solution of an impurity semiconductor model by Hamiltonian renormalization

机译:哈密​​顿重归一化处理杂质半导体模型的精确解

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

In this paper, we present exact solutions for a semiconductor model treated in the framework of Wegner's flow equation (continuous Hamiltonian renormalization) method. We considered as model a two-band Anderson impurity Hamiltonian with band-band and band-impurity hybridization and also with e-e interaction on the localized states of the impurity. Exact solutions are obtained for the renormalized level of the impurity for both vanishing and non-vanishing Hubbard term. The bands-impurity hybridization couplings vanish as a result of the flow-renormalization while the band energies do not change (as required). (C) 2004 Elsevier B.V. All rights reserved.
机译:在本文中,我们为在Wegner流动方程(连续哈密顿量重归一化)方法框架下处理的半导体模型提供了精确的解决方案。我们将带频带和带杂质杂交以及在杂质的局部状态下具有电子相互作用的两带安德森杂质哈密顿量作为模型。对于消失和不消失的哈伯德项,都获得了针对杂质的重新归一化水平的精确解。由于流动重新归一化,而带-杂质杂化耦合消失,而带能量未发生变化(按要求)。 (C)2004 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号