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首页> 外文期刊>Physica, B. Condensed Matter >Studies on structural, optical and electrical properties of boron doped zinc oxide films prepared by spray pyrolysis technique
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Studies on structural, optical and electrical properties of boron doped zinc oxide films prepared by spray pyrolysis technique

机译:喷雾热解法制备掺硼氧化锌薄膜的结构,光电性能

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Boron doped and undoped zinc oxide (ZnO) thin films were prepared by pyrolytic decomposition of methanolic solution of zinc acetate onto glass substrates. The structural properties of the films were studied by using X-ray diffraction. The results show that both the boron doped and undoped films exhibit hexagonal wurtzite structure with strong c-axis orientation as evidenced by X-ray diffraction patterns. The crystallite size wanes with increasing doping concentration. The electrical resistivity studies were carried out using the four-probe method. It is found that the films with 0.8 wt% boron doping concentration attains the lowest resistivity (10 (4)Omega m), whereas for higher and lower doping concentrations resistivity increases. The thermoelectric power studies showed that the doped and undoped films exhibit n-type conductivity, optical studies revealed that with increase in doping concentration the transmittance of the film increases in the wavelength range 400-600 nm. The optical absorption data were used to determine band gap energy and it is found to be 3.22 eV for undoped ZnO films and 3.32 for boron doped films. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 20]
机译:通过将乙酸锌的甲醇溶液热分解到玻璃基板上,制备了掺杂硼和不掺杂氧化锌(ZnO)的薄膜。通过使用X射线衍射研究膜的结构性质。结果表明,通过X射线衍射图证明,掺杂和未掺杂硼的膜均显示具有强c轴取向的六方纤锌矿结构。晶粒尺寸随着掺杂浓度的增加而减小。电阻率研究使用四探针法进行。发现具有0.8wt%硼掺杂浓度的膜达到最低的电阻率(10(4)Ω·m),而对于更高和更低的掺杂浓度,电阻率增加。热电功率研究表明,掺杂和未掺杂的薄膜表现出n型导电性,光学研究表明,随着掺杂浓度的增加,薄膜的透射率在400-600 nm的波长范围内增加。使用光吸收数据确定带隙能量,发现未掺杂的ZnO薄膜的带隙能量为3.22 eV,而硼掺杂的薄膜的带隙能量为3.32 eV。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:20]

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