Defect characterization of a-SiC : H and a-SiN : H alloys produced by ultrahigh vacuum plasma enhanced chemical vapor deposition in different plasma conditions

摘要

High electronic quality a-SiC: H and a-SiN : H films with optical gap up to 2.3 eV have been deposited by ultrahigh vacuum plasma enhanced chemical vapour deposition in undiluted and hydrogen diluted reactive gas mixtures. Optical and photoelectrical characterizations have been performed. Successful progresses towards the deposition of a-SiC :H and a-SiN :H having high electronic properties and low defect densities have been obtained. Modulated photocurrent technique has been applied to study gap state energetic profiles. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 23]