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首页> 外文期刊>Physica, B. Condensed Matter >Theoretical study of hydrogen-related complexes in diamond for low-resistive n-type diamond semiconductor
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Theoretical study of hydrogen-related complexes in diamond for low-resistive n-type diamond semiconductor

机译:低电阻n型金刚石半导体中金刚石中与氢有关的配合物的理论研究

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摘要

We performed local density approximation based ab initio calculations for isolated substitutional impurity (nitrogen, phosphorus, and sulfur), hydrogen at various sites, and hydrogen-related complexes (phosphorus-hydrogen and sulfur-hydrogen) in diamond. Atomic and electronic structures of these point defects are determined. Vibrational frequencies and cohesive energy of the hydrogen-related complexes are estimated. From the knowledge that we obtained with our ab initio calculations, we propose the co-doping method that enable the fabrication of low-resistive n-type diamond. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 10]
机译:我们对钻石中分离出的替代杂质(氮,磷和硫),各个位置的氢以及与氢有关的配合物(磷-氢和硫-氢)进行了从头算的局部密度近似计算。确定这些点缺陷的原子和电子结构。估计与氢有关的配合物的振动频率和内聚能。根据从头算计算中获得的知识,我们提出了共掺杂方法,该方法可以制造低电阻n型金刚石。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:10]

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