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Heats of formation of binary semiconductors

机译:形成二元半导体的热量

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摘要

Heats of formation of tetrahedrally coordinated II-VI and III-V groups of binary semiconductors have been calculated using plasmon energy data. Two simple relations between plasmon energy and heats of formation have been proposed. One is based on spectroscopic model of Phillips and Van Vechten and other is based on the best-fit data of heats of formation. The calculated values of heats of formation from both the equations are compared with the experimental values and the values reported by earlier workers. A fairly good agreement has been obtained between them.
机译:已使用等离激元能量数据计算了二元半导体的四面体配位的II-VI和III-V组的形成热。已经提出了等离子体激元能量与形成热之间的两个简单关系。一种是基于Phillips和Van Vechten的光谱模型,另一种是基于地层热的最佳拟合数据。将两个方程式计算出的地层热值与实验值和早期工人报告的值进行比较。他们之间已经获得了相当好的协议。

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