首页> 外国专利> Heat resistance it is low formation manner of the dielectricity factor thin film, that heat resistance low the semiconductor equipment null which uses the semiconductor layer insulation film and this semiconductor layer insulation film which consist of the dielectricity factor

Heat resistance it is low formation manner of the dielectricity factor thin film, that heat resistance low the semiconductor equipment null which uses the semiconductor layer insulation film and this semiconductor layer insulation film which consist of the dielectricity factor

机译:耐热性是介电系数薄膜的低形成方式,耐热性低是使用由介电系数构成的半导体层绝缘膜的半导体设备和该半导体层绝缘膜

摘要

PROBLEM TO BE SOLVED: To provide a thin film that has improved heat resistance, has low dielectric constant, and can be applied to a semiconductor element, electrical circuit components, or the like. SOLUTION: This heat-resistance low dielectric constant thin film is composed of molecules, whose element symbols are B, N, and H, has a composition which satisfies 0.7 number of N atoms 1.3 and 1.0 number of H atoms 2.2 for one atom of B, and has a dielectric constant of 2.4 or less.
机译:解决的问题:提供一种具有改善的耐热性,具有低介电常数并且可以应用于半导体元件,电路部件等的薄膜。解决方案:该耐热性低介电常数薄膜由分子组成,其分子符号为B,N和H,其组成满足0.7

著录项

  • 公开/公告号JP3508629B2

    专利类型

  • 公开/公告日2004-03-22

    原文格式PDF

  • 申请/专利权人 三菱電機株式会社;

    申请/专利号JP19990181147

  • 发明设计人 角田 誠;三上 登;信時 英治;

    申请日1999-06-28

  • 分类号H01L21/318;C01B35/14;C23C16/38;H01L21/768;

  • 国家 JP

  • 入库时间 2022-08-21 23:24:34

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