High-temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures

摘要

Lasing, stimulated emission and photoluminescence in InGaN/GaN multiquantum well (MQW) heterostructures were investigated in a wide temperature interval from the liquid nitrogen temperature up to 600 K. Laser action was achieved up to T = 585 K in a heterostructure consisting of ten quantum wells with a width of 10 nm. Laser thresholds at T = 78, 300, and 585 K were 25, 100, and 550 kW/cm~2, respectively. The pulse energy of the InGaN/GaN MQW laser at room temperature was 600 nJ and the average power was 0.6 mW. The characteristic temperature value of T_0 = 164 K was derived from the temperature dependence of the lasing threshold.