Intraband photodetection at 1.3-1.5 mu m in self-organized GaN/AlN quantum dots

摘要

GaN/AlN quantum dot photodetectors based on intraband absorption and in-plane carrier transport have been fabricated and characterized. These photodetectors operate at room temperature at telecommunication wavelengths (1.3-1.55 mu m). Their TM-polarized intraband absorption is ascribed to the transition from the ground state s to the excited state p(z) of the GaN dots. The responsivity peaked at 1.41 mu m is as high as 8 mA/W at room temperature for the interdigitated contact photodetector. (C) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.