Preparation, thermal stability, and electrical transport properties of In/Sn codoped beta-Zn4Sb3 single crystal

摘要

In and Sn codoped beta-Zn4Sb3 single crystals were prepared by a Sn-flux method according to the formula Zn4.4Sb3Sn3Inx(x = 00.5). The thermal weight loss is suppressed completely until the melting point of the single crystals. All crystals exhibit p-type conduction. The carrier mobility of the single crystals is increased, compared to a beta-Zn4Sb3 polycrystalline sample. All samples possess relatively high electrical conductivity, reaching 6.3 x 10(4) S/m for the sample with x = 0.18. The Seebeck coefficient is enhanced on increasing of the total content of In and Sn. The sample with x = 0.5 exhibits excellent electrical properties, and shows a maximal power factor of 1.53 x 10(-3) W/m/K-2 at 603 K. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim