INFLUENCE OF INHOMOGENEOUS BROADENING ON SPECTRALLY RESOLVED FOUR-WAVE MIXING IN SEMICONDUCTORS

摘要

The influence of inhomogeneous broadening on results obtained from spectrally resolved transient four-wave mixing in semiconductors is studied and the homogeneous and inhomogeneous linewidths are simultaneously deduced. Experimental results obtained from the impurity-bound exciton I-1 in CdSe and the heavy-hole and light-hole excitons in GaAs multiple quantum well structures are presented. Furthermore, the case is investigated when more resonances are coherently excited leading to quantum beats. [References: 14]