Very strong nonlinear optical absorption in green GaInN/GaN multiple quantum well structures

摘要

The efficiency of green GaInN/GaN light emitting diodes (LEDs) is known to drop under high current densities. To explore the reason, 535 nm emitting GaInN/GaN multiple quantum well (MQW) and GaN epilayers were characterized using Z-scan techniques under comparable excitation conditions with a continuous wave laser. Two wavelengths; 514 nm and 488 nm, were selected right below and above the apparent optical absorption edge. At 514 nm, a very large nonlinear absorption coefficient ss = 2.6 cm/W was obtained. This leads to a 20 l absorption enhancement at a photon flux of 21 kW/cm(2). We attribute this to nonlinear free-carrier absorption. On the other hand, at 488 rim, a nonlinear saturable absorption with ss = -1.7 cm/W was observed. This induced transparency indicates photon bleaching in the MQW. Apparently, free carrier dynamics strongly affects optical nonlinearity, while nonlinear absorption provides a small contribution to the limitations of current green LEDs. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.