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首页> 外文期刊>Applied Physics Letters >Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices
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Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices

机译:光泵浦GaInN / GaN多量子阱,用于实现高效的绿色发光器件

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摘要

We report on a green light-emitting device, in which the light of an efficient blue 1?mm2 GaInN/GaN light-emitting diode (LED) is converted into green light by an optically pumped GaInN/GaN multiple quantum well structure. This solution reached an efficacy of 127?lm/W, i.e., higher than that of state-of-the-art 1?mm2 GaInN/GaN LEDs emitting directly at the target wavelength, at 350?mA current and 535?nm peak wavelength. Optically pumped converters overcome the design limitations of typical multiple quantum well LEDs, where carrier transport issues limit the maximum number of functioning wells and might help to solve the problem of the green gap.
机译:我们报告了一种绿色发光器件,其中通过光泵浦GaInN /将有效的1?mm 2 蓝色GaInN / GaN发光二极管(LED)的光转换为绿色光。 GaN多量子阱结构。该解决方案的效率达到了127?lm / W,即高于在350?C的波长下直接以目标波长发射的最新1?mm 2 GaInN / GaN LED的效率。毫安电流和535?nm峰值波长。光泵浦转换器克服了典型的多量子阱LED的设计限制,其中载流子传输问题限制了功能阱的最大数量,并可能有助于解决绿色间隙问题。

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