Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements

摘要

The variation of the threshold current with hydrostatic pressure has been studied in a sequence of increasingly tensile-strained GaAsP/AlGaAs single-quantum-well laser diodes. The results have been explained in terms of the radiative current and an additional, thermally activated flux of unconfined electrons diffusing via the X-minima into the indirect bandgap, p-doped cladding region.