Growth orientation of one-dimensional silicon nanowires prepared by thermal evaporation

摘要

One-dimensional silicon nanowires have been grown by thermal evaporation and their growth orientations determined by transmission electron microscopy studies. The nanowires, which are often highly curved in morphology and heavily twinned in microstructure, are crystallographically separated into several sections, each with a characteristic crystallographic orientation along the wire axis. Straight nanowires, or straight sections in a curved nanowire, are found to to have non-unique crystallographic orientations when {111} twinning occurs.