Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum

摘要

One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO2 surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO2 surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV.