The Si_3N_4/TiN Interface: 2. Si_3N_4/TiN(001) Grown with a-7 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy

摘要

Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze Si_3N_4/TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition onto MgO(001), with an electrically-floating substrate potential of-7 V, in mixed 1:1 Ar/N_2 discharges maintained at a total pressure of 0.5Pa (3.75 × 10~(-3)Torr). The TiN(001) films were grown at 600°C and the 4-ML-thick Si_3N_4 overlayers at room temperature. AR-XPS spectra were obtained using incident monochromatic Al K_α x-radiation at 0.83401 nm. Si_3N_4/TiN(001) Ti 2p spectra reveal enhanced unscreened final-state satellite peaks, compared to Ti 2p spectra obtained from uncapped TiN(001), due to decreased electronic screening induced by Si_3N_4/TiN(001) bilayer interfacial polarization.