Charge Carrier Transport in LEDs Based on Multiple (Al (x) Ga1-x )(0.5)In0.5P/(Al0.54Ga0.46)(0.5)In0.5P Quantum Wells

摘要

The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple (Al (x) Ga1-x )(0.5)In0.5P/(Al0.54Ga0.46)(0.5)In0.5P quantum wells are presented. The experiment showed that increasing the number of quantum wells and decreasing the Al content in the Al (x) Ga1-x solid solution lead to an increase in the forward current at a fixed voltage. An analysis showed that the results obtained can be interpreted using the theory of diffusion charge transport in a double heterostructure with a narrow-bandgap layer, the thickness of which is many times larger than the thickness of a single quantum well. The proposed approach takes into account the carrier transport by tunneling through the barriers in an active region with multiple quantum wells.