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METHOD OF INCREASING THE ELECTRIC STRENGTH OF A DIELECTRIC FILM

机译:增加电介质膜的电强度的方法

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A breakdown of dielectric films is most often observed in metala ielectric Aetal systems. If the dielectric film does not contain sharp inhomogeneities, the effect of the lower electrode polarity is manifested. In [1] it was demonstrated (with the use of an electronic microscope) that microtips reaching a maximal height of 800 ?were presented on the lower aluminum electrode [1]. Electron emission from a microtip creates a high current density if the lower electrode has negative polarity. This emission current from the microtip causes the dielectric to melt, thereby creating a melted channel with increased electrical conductivity; then the second breakdown stage is initiated, and the dielectric is destroyed in the region of a few microns [2]. For a SiO film, microcracks were recorded on the upper dielectric surface. In the process of upper electrode deposition, these cracks were filled by metal, and microtips initiating a breakdown for the negative polarity of the upper electrode were formed again [2].
机译:电介质薄膜的击穿最常见于金属电系统。如果介电膜不包含尖锐的不均匀性,则显示出较低电极极性的效果。在[1]中,已证明(使用电子显微镜)在下部铝电极上出现了最大高度为800μl的微尖[1]。如果下部电极具有负极性,则来自微尖端的电子发射会产生高电流密度。来自微尖端的发射电流使电介质熔化,从而形成具有增加的电导率的熔化通道。然后启动第二击穿阶段,并在几微米范围内破坏电介质[2]。对于SiO膜,在上介电表面记录了微裂纹。在上电极沉积过程中,这些裂纹被金属填充,并再次形成了引发上电极负极性击穿的微尖端[2]。

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