Reverse engineering of Al_xGa_(1-x)As/GaAs structures composition by reflectance spectroscopy

摘要

The paper presents the application of non-modulation reflectance method for composition profiling of epitaxial Al_xGa_(1–x)As/GaAs structures. This non-destructive method is based on spectral measurements and theoretical reflectance spectrum matching. This is a very accurate and sensitive method of determining the Al composition in Al_xGa_(1–x)As layers and structures with resolution down to 1 nm. In this work, the authors describe theoretic principles of this method and present ex- perimental results of characterization of different AlGaAs structures to prove the potential of the worked out method.