Iridium CVD using di-m-Chloro-tetrakis(trifluorophosphine)- diiridium (I) Precursor, in-situ generated from Chlorotetrakis(trifluorophosphine)iridium

摘要

The CVD of iridium thin films using di-m-chloro-tetrakis(trifluorophosphine)diiridium(I) as the precursor is presented. This inorganic, volatile, and unstable precursor is supplied in-situ into the CVD reactor by the decomposition reaction of chlorotetrakis(trifluorophosphine)iridium, a more air-stable but more thermally sensitive compound. By using this carbonand oxygen-free precursor, condensed, conformal, and highly pure iridium metallic films are grown on SiO_2/Si and Ta/TaN substrates at growth temperatures as low as 200C. The dependence of the deposition process, and characteristics of iridiumdeposited films such as morphology, microstructure, and chemical composition, on deposition temperature and the nature of the carrier gas (N_2 or O_2) are also investigated.