CVD-Produced polycrystalline silicon thin film prepared by fluorine-mediated crystal growth on a glass substrate and its thin film transistor application

摘要

A set of the source gases Si2H6 and F-2 in a conventional low-pressure thermal CVD has enabled the direct preparation of device-grade poly-Si films at 450 degrees C. Field-effect mobility exceeding 60 cm(2)/Vs and crystallinity exceeding 90% in bottom-gate TFTs have been achieved; the high mobility is associated with fast nucleation in the early stage of crystal growth, which has been revealed by AFM and TEM images.