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首页> 外文期刊>Superconductor Science & Technology >A novel, two-step top seeded infiltration and growth process for the fabrication of single grain, bulk (RE)BCO superconductors
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A novel, two-step top seeded infiltration and growth process for the fabrication of single grain, bulk (RE)BCO superconductors

机译:一种新颖的两步顶种子浸渗和生长工艺,用于制造单粒散装(RE)BCO超导体

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摘要

A fundamental requirement of the fabrication of high performing, (RE)-Ba-Cu-O bulk superconductors is achieving a single grain microstructure that exhibits good flux pinning properties. The top seeded melt growth (TSMG) process is a well-established technique for the fabrication of single grain (RE)BCO bulk samples and is now applied routinely by a number of research groups around the world. The introduction of a buffer layer to the TSMG process has been demonstrated recently to improve significantly the general reliability of the process. However, a number of growth-related defects, such as porosity and the formation of micro-cracks, remain inherent to the TSMG process, and are proving difficult to eliminate by varying the melt process parameters. The seeded infiltration and growth (SIG) process has been shown to yield single grain samples that exhibit significantly improved microstructures compared to the TSMG technique. Unfortunately, however, SIG leads to other processing challenges, such as the reliability of fabrication, optimisation of RE2BaCuO5 (RE-211) inclusions (size and content) in the sample microstructure, practical oxygenation of as processed samples and, hence, optimisation of the superconducting properties of the bulk single grain. In the present paper, we report the development of a near-net shaping technique based on a novel two-step, buffer-aided top seeded infiltration and growth (BA-TSIG) process, which has been demonstrated to improve greatly the reliability of the single grain growth process and has been used to fabricate successfully bulk, single grain (RE)BCO superconductors with improved microstructures and superconducting properties. A trapped field of similar to 0.84 T and a zero field current density of 60 kA cm(-2) have been measured at 77 K in a bulk, YBCO single grain sample of diameter 25mm processed by this two-step BA-TSIG technique. To the best of our knowledge, this value of trapped field is the highest value ever reported for a sample fabricated by an infiltration and growth process. In this study we report the successful fabrication of 14 YBCO samples, with diameters of up to 32 mm, by this novel technique with a success rate of greater than 92%.
机译:高性能(RE)-Ba-Cu-O块状超导体制造的基本要求是实现具有良好磁通钉扎特性的单晶粒微结构。顶部种子熔体生长(TSMG)工艺是一种用于制造单粒(RE)BCO大块样品的成熟技术,目前已被世界各地许多研究组常规应用。最近已经证明在TSMG工艺中引入缓冲层可以显着提高工艺的总体可靠性。然而,许多与生长相关的缺陷,例如孔隙率和微裂纹的形成,仍然是TSMG工艺所固有的,并且事实证明,通过改变熔体工艺参数很难消除。与TSMG技术相比,种子浸润和生长(SIG)过程已显示出可产生单晶样品,其微观结构显着改善。然而,不幸的是,SIG带来了其他加工挑战,例如制造的可靠性,样品微观结构中RE2BaCuO5(RE-211)夹杂物(尺寸和含量)的优化,加工后样品的实际氧合以及因此而导致的优化。块状单晶的超导性能。在本文中,我们报告了一种基于新型两步,缓冲辅助顶部种子浸润和生长(BA-TSIG)工艺的近网成型技术的发展,该工艺已被证明可大大提高该工艺的可靠性。单晶粒生长工艺,已成功用于制造具有改善的微结构和超导性能的块状单晶粒(RE)BCO超导体。在两步BA-TSIG技术处理的直径为25mm的YBCO单粒大块样品中,在77 K下测得的陷阱场类似于0.84 T,零场电流密度为60 kA cm(-2)。据我们所知,该捕获场的值是有史以来通过渗透和生长过程制备的样品的最高值。在这项研究中,我们报告了通过这种新颖技术成功制造了14个直径最大为32 mm的YBCO样品,成功率超过92%。

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