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Sample and length-dependent variability of 77 and 4.2K properties in nominally identical RE123 coated conductors

机译:名义上相同的RE123涂层导体中77和4.2K特性的样品和长度相关的可变性

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摘要

We present a broad study by multiple techniques of the critical current and critical current density of a small but representative set of nominally identical commercial RE123 (REBa2Cu3O7-delta, RE = rare Earth, here Y and Gd) coated conductors (CC) recently fabricated by SuperPower Inc. to the same nominal high pinning specification with BaZrO3 and RE2O3 nanoprecipitate pinning centers. With high-field low-temperature applications to magnet technology in mind, we address the nature of their tape-to-tape variations and length-wise I-c inhomogeneities by measurements on a scale of about 2 cm rather than the 5 m scale normally supplied by the vendor and address the question of whether these variations have their origin in cross-sectional or in vortex pinning variations. Our principal method has been a continuous measurement transport critical current tool (YateStar) that applies about 0.5 T perpendicular and parallel to the tape at 77 K, thus allowing variations of c-axis and ab-plane properties to be clearly distinguished in the temperature and field regime where strong pinning defects are obvious. We also find such infield measurements at 77 K to be more valuable in predicting 4.2 K, high-field properties than self-field, 77 K properties because the pinning centers controlling 77 K performance play a decisive role in introducing point defects that also add strongly to J(c) at 4.2 K. We find that the dominant source of I-c variation is due to pinning center fluctuations that control J(c), rather than to production defects that locally reduce the active cross-section. Given the 5-10 nm scale of these pinning centers, it appears that the route to greater I-c homogeneity is through more stringent control of the REBCO growth conditions in these Zr-doped coated conductors.
机译:我们通过多种技术对最近由以下公司制造的少量但有代表性的名义上相同的商用RE123(REBa2Cu3O7-delta,RE =稀土,此处为Y和Gd)涂层导体的临界电流和临界电流密度进行了广泛的研究。 SuperPower Inc.具有与BaZrO3和RE2O3纳米沉淀钉扎中心相同的标称高钉扎规格。考虑到磁场技术在磁场下的高场低温应用,我们通过测量大约2 cm的刻度(而不是通常由5 m的刻度)来解决其磁带到磁带变化和长度方向Ic不均匀性的本质。供应商,并解决以下问题:这些变化是否起源于横截面或涡旋钉扎变化。我们的主要方法是连续测量传输临界电流工具(YateStar),该工具在77 K时垂直和平行于磁带施加约0.5 T的电流,因此可以在温度和温度下清楚地区分c轴和ab平面特性。强钉扎缺陷明显的现场状态。我们还发现,在预测4.2 K高场特性方面,在77 K的这种内场测量比自场77 K的特性更有价值,因为控制77 K性能的钉扎中心在引入点缺陷方面起着决定性的作用,这也大大增加了点缺陷。在4.2 K时达到J(c)。我们发现Ic变化的主要来源是由于控制J(c)的钉扎中心波动,而不是局部降低有效横截面的生产缺陷。考虑到这些钉扎中心的尺寸为5-10 nm,看来实现更高I-c均匀性的途径是通过更严格地控​​制这些掺Zr涂层的导体中REBCO的生长条件。

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