The preparation of diamond/tungsten-carbide composite films by microwave plasma-assisted CVD

摘要

Diamond/tungsten carbide composite films are deposited on Si and W by microwave plasma-assisted CVD using a CH4/H-2/WC1(6) gas mixture. The composite films are studied by SEM, laser Raman scattering and X-ray diffraction. The film composition and morphology can be adjusted by controlling the concentration Of WC1(6) in the gas mixture. Such a diamond-based composite film can serve as an interlayer to improve the adhesion of diamond films.