Future in-fab applications of total reflection X-ray fluorescence spectrometry for the semiconductor industry

摘要

In-fab analytical methods are of increasing interest for wafer monitoring in advanced semiconductor device manufacturing. In particular, an analytical method which allows non-destructive measurements of implant dose and surface roughness would be very beneficial. We investigated the capabilities of total reflection X-ray fluorescence spectrometry (TXRF) to determine implant dose and surface roughness. These advanced applications of TXRF can be used to monitor processes like implantation, rapid thermal annealing, and chemical mechanical polish. As implants in Si at implant energies of 2 ke V, 10 keV and 50 keV were studied. Angle resolved TXRF measurements were performed with a commercial Rigaku 3750 system. The TXRF results were compared to secondary ion mass spectrometry (SIMS) measurements.