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Langmuir probe measurements of the ion extraction process in inductively coupled plasma-mass spectrometry. Part 2. Measurements of floating voltage and radiofrequency voltage

机译:电感耦合等离子体质谱法中离子提取过程的Langmuir探针测量。第2部分。浮动电压和射频电压的测量

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摘要

A single Langmuir probe is thrust axially through the skimmer into the supersonic jet of a typical interface for inductively coupled plasma-mass spectrometry (ICP-MS) Floating voltage V_f is measured from current-voyage curves at various axial positions and is generally in the range +2 to +7 V in tb supersonic jet A disturbance at the skimmer, when present, induces a sharp increase in V_f in the vicnhy of the skimmer tip Floating voltage generally decreases as the probe is retracted farther behind the skimmer. The measured d c voltages are attributed primarily to plasma rectification and to the calore-lectric effect between two metal surfaces at different temperatures in a plasma. An r.f voltage of up to 25 V (peak-to-peak) at the frequency of the plasma generator can also be measured behind the sampler.
机译:单个Langmuir探头轴向穿过分离器进入典型接口的超音速射流,以用于电感耦合等离子体质谱(ICP-MS)。浮动电压V_f是根据各个轴向位置处的电流航行曲线测得的,通常在范围内tb超声射流中的+2至+7 V撇渣器的干扰(如果存在)会导致撇渣器尖端附近的V_f急剧增加。浮动电压通常随着探头向撇渣器后面的缩回而降低。测得的dc电压主要归因于等离子体整流以及等离子体中不同温度下两个金属表面之间的热电效应。在等离子发生器的频率下,也可以在采样器后面测量高达25 V(峰对峰)的射频电压。

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