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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Optimization of front metal contact firing scheme to achieve high fill factors on screen printed silicon solar cells
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Optimization of front metal contact firing scheme to achieve high fill factors on screen printed silicon solar cells

机译:优化正面金属接触烧制方案,以在丝网印刷硅太阳能电池上实现高填充率

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摘要

For widespread implementation of silicon PV, the module cost must be reduced by a factor of 2-4. This can be accomplished by lowering the cost of solar cell materials and processing without sacrificing cell efficiency. IZ combination of high throughput belt line processing, SP contacts and me-Si material offers an opportunity for significant cost reduction. However, most cell manufacturers who use the above combination are only able to achieve fill factors in the range of 0.68-0.75 with cell efficiencies in the range of 10-14%. Thus throughput gains are attained at the expense of device performance. Tn addition, there is considerable scatter in the fill factor of the SP cells in the literature with no clear guidelines for achieving high fill factors. This paper shows that proper understanding of loss mechanisms and optimization of SP paste and Bring cycle can lead to fill factors approaching 0.77 and 0.79 on me-Si and single crystal silicon, respectively, on a 45 Omega/square rapidly formed belt line emitter with a shallow junction depth of similar to 0.27 mum It was observed that deep and shallow emitters on me-Si could lead to the same values of fill factors similar to 0.77 when the proper combination of paste and firing cycle is applied. The peak firing temperature for deep emitter is higher than the shallow ones with superior value of junction leakage current. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 2]
机译:为了广泛实施硅PV,必须将模块成本降低2-4倍。这可以通过降低太阳能电池材料和工艺的成本而不牺牲电池效率来实现。 IZ结合了高吞吐量的皮带生产线处理,SP触点和me-Si材料,为降低成本提供了机会。但是,大多数使用以上组合的电池制造商只能在0.68-0.75的范围内达到填充系数,而电池效率在10-14%的范围内。因此,以设备性能为代价获得了吞吐量的增长。此外,在文献中,SP单元的填充因子存在相当大的分散性,没有明确的指导方针来实现高填充因子。本文表明,对45Ω/平方快速形成的带状线发射极的me-Si和单晶硅的损耗机理的正确理解以及SP浆料和Bring周期的优化可以分别导致填充因子分别接近0.77和0.79。浅结深度大约为0.27微米观察到,当采用适当的糊料和焙烧循环组合时,me-Si上的深发射极和浅发射极可能导致与0.77相同的填充因子值。深发射极的峰值点火温度高于浅发射极,其结漏电流值较高。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:2]

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