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The preparation of CuInSe2 films by combustion method and non-vacuum spin-coating process

机译:燃烧法和非真空旋涂法制备CuInSe2薄膜

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摘要

A low-cost non-vacuum process for fabrication of CuInSe2 (CIS) films by combustionmethod and spin-coating process is described. First, the Cu, In oxides precursors are synthesized by combustion method, which is simpler and cheaper than the other preparation methods and is also the first applied in the CIS solar cells. Second, the CIS films are deposited via spin-coating from precursor slurry consisting of Cu, In oxides components and selenization process. Through X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive x-ray spectroscopy (EDS) and absorption spectroscopy measurement, it is found that Cu, In oxides precursors show the dominant CuO, In2O3 and Cu2In2O5 phases and have a uniform distribution of the particle size. The CIS films show the dominant chalcopyrite structure, In2O3 and Cu2Se phases and have a micron-sized dense gain. A typical near stoichiometric little Cu-rich CIS films is obtained. An energy band gap about 0.9 eV and an absorption coefficient exceeding 105 cm1 are also obtained in our work.
机译:描述了一种通过燃烧方法和旋涂工艺制造CuInSe2(CIS)薄膜的低成本非真空工艺。首先,通过燃烧法合成了Cu,In氧化物前驱体,该方法比其他制备方法更简单,更便宜,并且也是首次应用于CIS太阳能电池。其次,通过旋涂从由Cu,In氧化物组分和硒化工艺组成的前体浆料中沉积CIS膜。通过X射线衍射(XRD),扫描电子显微镜(SEM),能量色散X射线光谱(EDS)和吸收光谱测量,发现Cu,In氧化物前体显示出主要的CuO,In2O3和Cu2In2O5相,并具有粒径分布均匀。 CIS薄膜显示出主要的黄铜矿结构,In2O3和Cu2Se相,并具有微米级的致密增益。获得了典型的接近化学计量的富铜的小CIS薄膜。在我们的工作中,还获得了约0.9 eV的能带隙和超过105 cm1的吸收系数。

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