NEW UNIQUENESS THEOREMS FOR THE ONE-DIMENSIONAL DRIFT-DIFFUSION SEMICONDUCTOR DEVICE EQUATIONS

摘要

We consider the one-dimensional drift-diffusion semiconductor device equations, under the assumption of zero generation-recombination. The uniqueness theorems that are given in the literature for this system do not hold for large values of the applied bias. The purpose of this paper is to introduce new techniques, which allow us to prove uniqueness theorems, in the case of symmetric p-n and p-i-n junctions, which are valid for arbitrary values of the applied bias. These techniques are essentially based on new monotonicity principles. As a direct consequence of these principles, we prove that the voltage-current characteristic of a symmetric p-n or p-i-n junction is strictly increasing. [References: 20]