Giant-grain Poly-Si by CW Laser Annealing of a-Si with Cylindrical Microlens Array

摘要

We have developed a super large grain poly-Si on glass by CW laser crystallization using cylindrical microlens array. A giant-grain poly-Si with average grain size of 15μm × 15μm was achieved. The n-channel TFT using the poly-Si exhibited the field-effect mobility, on/off current ratio, threshold voltage and gate voltage swing of 470 cm{sup}2/Vs, ～10{sup}8, 0.1 V and 0.4 V/dec., respectively. On the other hand, the p-channel TFT exhibited 192 cm{sup}2/Vs, ～10{sup}8, -2.2 V and 0.5 V/dec, respectively. A single crystalline Si on glass can be achieved with this technique.