Top-Gate and Bottom-Gate Amorphous ZnO Transparent TFTs Fabricated by All-Etching Processes

摘要

Both top-gate and bottom-gate amorphous ZnO TTFTs were effectively fabricated by thinning the ZnO layer and by using all-etching processes. Rather high field-effect mobilities of 25 cm{sup}2/Vs and 4 cm{sup}2/Vs and on/off current ratios of >10{sup}7 and >10{sup}6 were achieved for top-gate and bottom-gate configurations, respectively.