Development and Application Prospects of InGaN-based Optoelectronic Devices Prepared in Nonpolar Orientations

摘要

High-power light-emitting diodes (LEDs) and laser diodes have been realized on nonpolar planes of bulk-GaN substrates. Spontaneously polarized light emission is obtained from nonpolar LEDs, which is believed to improve the system energy efficiency when nonpolar LEDs are combined with liquid-crystal displays. Preliminary experimental results are reported.