Ultra-flexible Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) Thin Film Transistor

摘要

: In this work, we demonstrate an ultra-flexible a-IGZO TFT on PEN plastic substrate. The a-IGZO TFT could be operated well with almost unchanged performance after banding at radius of 4 mm (strain ～1.5%) for more than 100 times. This was implemented the utilization of polymer gate dielectric, poly(4-vinylpheonol) (PVP). The PVP was then demonstrated with no damage after plasma process equivalent the a-IGZO deposition process. Due to the large Young's modulus difference, the stress was believed mainly within polymer gate dielectric. Therefore, after bending, the a-IGZO was not damaged. In addition to the ultra-flexibility, the a-IGZO TFT exhibit mobility around 1.3 cm/Vs with nearly 6 orders of magnitude current on/off ratio at operation of 10V. The mobility could be further increase by fine-tuning the a-IGZO deposition condition. Combing the ultra-flexibility and the acceptable performance, this technology is suitable to integrate into LCD or OLED implementing ultra-flexible display.