首页> 外文期刊>Semiconductors >Study of the I-V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing
【24h】

Study of the I-V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing

机译:真空退火后Si衬底上纳米结构Pd膜的I-V特性研究

获取原文
获取原文并翻译 | 示例
           

摘要

The I-V characteristics of nanostructured Pd films on a Si substrate are investigated. The nanostructures (nanoislands) are formed by the vacuum annealing of continuous ultrathin Pd films sputtered onto a substrate. The shape of the I-V characteristics of the investigated Si substrate-Pd film system is shown to be heavily dependent on the degree of film nanostructuring. The surface morphology of the films is studied using scanning electron microscopy.
机译:研究了硅衬底上纳米结构的Pd薄膜的I-V特性。纳米结构(纳米岛)是通过对溅射到基板上的连续超薄Pd膜进行真空退火而形成的。所研究的Si衬底-Pd膜系统的I-V特性的形状在很大程度上取决于膜纳米结构的程度。使用扫描电子显微镜研究膜的表面形态。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号