Switching of properties of gallium arsenide heterostructure diodes has been studied. It is shown that use of a graded-gap base region or a wide-gap "wall" (abrupt heterojunction) enables control over the distribution of injected carriers and their accumulation near the p-n junction, which leads to a faster reverse-voltage recovery (60-70 ps). Structures are considered in which an impurity gradient is used, together with the gradient of the energy gap, in order to make the working voltage higher.
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