Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures

摘要

The results of simultaneous measurements of dynamic current-voltage and capacitance-voltage characteristics are presented for metal-oxide-semiconductor structures in the temperature range T = 420-470 K and voltage-sweep rates beta (v) = 0.5-1000 mV/s. The convective currents I-con (V) in oxide are extracted from usual ion currents in the I-V characteristics. In I-con (V) curves, the Na+-ion peaks are split. In addition, an envelope curve is seen in initial portions of "fast" I-con(V) curves with beta (V) greater than or similar to 10 mV/s that indicates to the presence of a certain quasi-steady ion-transport mode. A more equilibrium mode at slow rates beta(V) < 1 mV/s manifests itself in the form of stabilization of convective-current peak shapes. The nature of efficient neutralization of the second peaks in the I-con(V) dependences is discussed.