Implementation Principles for the Procedure of Extraction of Convective Currents in a Dielectric and Emission Currents at the Semiconductor-Dielectric Interface from the Dynamic Current-Voltage Characteristics of a Metal-Insulator-Semiconductor Structure

摘要

Implementation principles of a procedure used to extract convective currents in a dielectric and emission currents at the semiconductor-dielectric interface from the dynamic current-voltage (Ⅰ-Ⅴ) characteristics of a metal insulator-semiconductor (MIS) structure are discussed. A procedure for choosing parameters is described, and experimental methods for the control of the applicability conditions are proposed. It is noted that control of variations in "fast" surface states at the semiconductor-dielectric (insulator) interface is the most important stage in the course of the experiment.