Dependence of the electrical parameters of MBE-grown Cd(x)Hg(1-x)Tefilms on the level of doping with indium

摘要

Dependences of the minority-carrier lifetime and electron mobility in Cd-x Hg1-x Te films on their indium-doping level are studied. Films with x approximate to 0.22 grown by molecular-beam epitaxy on GaAs substrates were in situ doped with indium across their entire thickness. The temperature dependences of the lifetime were studied in the temperature range 77-300 K. The decrease in the lifetime, observed as the doping level increases, is governed by the mechanism of Auger recombination. As the doping level becomes higher, the mobility decreases in qualitative agreement with theoretical calculations.