Power bipolar devices based on silicon carbide

摘要

High-voltage 4H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors, and thyristors are discussed. The results of experimental and theoretical studies of the steady-state and transient characteristics of these devices are presented. Specific features of device operation, related to the specific electronic properties of silicon carbide and SiC-based p-n structures, are analyzed. (c) 2005 Pleiades Publishing, Inc.