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Magnetic Properties of Germanium-Doped Cadmium Telluride

机译:掺锗碲化镉的磁性

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The considerable contribution of van Vlek paramagnetism, which is caused by the presence of charged interstitial Te atoms and donor–acceptor pairs of the V_(Te)Ge_i type, to the total magnetic susceptibility of CdTe:Ge in the temperature range 4.2–300 K is revealed. The presence of a special feature in the (T) dependence at 50 K is caused by a variation in the charge state of interstitial Tei atoms, whose contribution starts to compete with a diamagnetic contribution induced by motion of vacancies along closed hexahedral ring-shaped trajectories. In fields as high as 0.15 T, magnetic hysteresis, which is caused by the orientation of magnetic clusters in the external field, is observed.
机译:van Vlek顺磁性的巨大贡献是由于在4.2–300 K的温度范围内,存在带电的填隙性Te原子和V_(Te)Ge_i型供体-受体对对CdTe:Ge的总磁化率被揭示。间隙Tei原子的电荷状态变化导致在(T)依赖关系中存在一个特殊特征,间隙Tei原子的电荷状态开始与空位沿封闭六面体环形轨迹运动引起的抗磁贡献竞争。在高达0.15 T的磁场中,观察到磁滞现象,这是由外场中磁簇的取向引起的。

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