Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

摘要

The effect of pulsed electromagnetic radiation with a leading-edge duration of 1.4 x 10(-9) s and a total pulse duration of similar to11.5 x 10(-9) s, a repetition rate of 10 kHz, and various pulse energies (less than or equal to2.4 x 10(-4) J) on Al/SiO2/Si structures is studied. Capacitance-voltage characteristics of such structures were measured before, during, and after exposure to ultrashort pulses. Changes dependent on the pulse energy caused by insulator polarization and a transformation of the nonequilibrium defect structure of the interface with the semiconductor as a result of the irradiation were found, as well as irreversible changes associated with a breakdown observed after the radiation was switched off. (C) 2004 MAIK "Nauka / Interperiodica".